various shape of 1400C Sic heating rod
Silicon carbide oxidation resistance
When silicon carbide heating elements use to 800 °C begins to oxidize in air, the temperature reached 100-1200 °C, the heating portion surface layer of silicon dioxide protective film, 1200 °C when cristobalite crystallized at 1400 °C, the protection film reaches a certain thickness, so that the oxidation rate becomes extremely slow component, stabilized. If you continue to heat up to 1527 °C above, the protective film received damage, a significant increase in the rate of oxidation, resulting in premature damage.
Silicon carbide heating element during use, although the oxidation is extremely slow, but long-running still lead to increased resistance, a phenomenon called aging.
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